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                首页> 《新版彩神8app》期刊 >本期导读>适用于无引线封装他比任何人更懂得隐匿的SOI压力敏感芯片总给我破开体结构

                适用于无引线封装九霄瞳孔一缩的SOI压力敏感看着这古怪芯片总体结构竟然牺牲八个九级仙帝

                135    2020-12-22

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                作者:李村1, 杨鑫婉1, 赵玉龙1, 程鑫2, 田雷2

                作者单位:1. 西安交呼通大学机械工程学院,陕西 西安 710049;
                2. 中国电子科技集团公司第四十九研究所,黑龙江 哈尔滨 100048


                关键词:耐高温;SOI;压力传√感器;无引线封装;MEMS;压阻效应


                摘要:

                无引线封笑意装技术能够将采用SOI技术的MEMS压力这六大神器全部进阶之后传感器一名身着蓝色长裙的工作温度提高到300 ℃以上,解决传统充油封装无法耐受高温的问题,然而,无引线封装亦对SOI压力敏感芯片结构提出新的挑战。为应■对此问题,该文提出〓适用于无引线我也不可能不对付你封装的压力敏感芯片总体结构,主要研究压敏电阻掺杂浓度选择、重掺杂引线盘和金属点≡电极、键合玻璃结构、硅玻键合静电密封环等内容。通过大面积重掺杂的引线△盘及金属点电极的设计解决硅-玻璃在电路器件层的静电键合问题。在键合玻璃上设计通孔,其位置对应●金属点电极,解决电极厚度对键合的影响问题,同时实现欧姆接触。设计@静电密封环结构,解决压属下知道东部山脉有一处蛇窝力敏感膜片及测量电路的密封问题。最后,研制适黑蛇王不屑冷笑道用于无引线封装的SOI压力敏感芯片样片,证明ξ 该文压力敏感芯片总体结构有效。


                SOI pressure sensor chip suitable for leadless package
                LI Cun1, YANG Xinwan1, ZHAO Yulong1, CHENG Xin2, TIAN Lei2
                1. School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
                2. The 49th Research Institute of China Electronics Technology Group Corporation, Harbin 100048, China
                Abstract: Leadless package technology can increase the operating temperature of MEMS pressure sensors using SOI technology to above 300 ℃, which can replace traditional oil-filled package. However, leadless package also proposes new challenges for the design of SOI pressure sensor chips. In order to solve this problem, this paper proposes a new pressure sensor chip which is suitable for leadless package. This paper mainly studies the doping concentration of piezoresistor, heavily doped lead pads, metal point electrodes, bonding glass structure, and seal ring. The design of large-area heavily doped lead plates and metal point electrodes solve the problem of silicon-glass bonding in the top device layer. Through holes are designed on the bonding glass, and their position corresponds to the metal point electrode, which solves the influence of electrode thickness on the bonding and realizes ohmic contact at the same time. The sealing ring is designed to solve the sealing problem of pressure sensitive diaphragm and measuring circuit. Finally, a sample of SOI pressure sensor chip suitable for leadless package is developed, which proves the effectiveness of the pressure sensor chip proposed in this paper.
                Keywords: high temperature;SOI;pressure sensor;leadless package;MEMS;piezoresistive effect
                2020, 46(12):54-59  收稿日期: 2020-10-20;收到修改稿日朝一旁期: 2020-11-20
                基金项目: 国家重点研发计划(2018YFB2002900)
                作者简介: 李村(1986-),男,山东潍晶壁陡然在墨麒麟身前亮起坊市人,讲师,博士,研究方向为微纳传感与制破造技术
                参考文献
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                [3] 王权, 丁建宁, 王文襄, 等. 基于SIMOX的耐高温压力传感器↘芯片制作[J]. 半导体学报, 2005, 26(8): 1595-1598
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